US Patent Issued to DIODES on Sept. 1 for "Semiconductor rectifier" (Taiwanese, British, Chinese, American Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,178, issued on Sept. 1, was assigned to DIODES Inc. (Plano, Texas). "Semiconductor rectifier" was invented by Tao Long (Shanghai), Ze Rui C... Read More

US Patent Issued to International Business Machines on Sept. 1 for "Trench capacitor in backside diffusion break" (New York Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,179, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Trench capacitor in backside diffusion break... Read More

US Patent Issued to SAMSUNG ELECTRONICS, Pusan National University Industry-University Cooperation on Sept. 1 for "Semiconductor device" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,180, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. and Pusan National University Industry-University Cooperation. "Semico... Read More

US Patent Issued to The 13th Research Institute of China Electronics Technology Group on Sept. 1 for "Method for preparing Schottky diode and Schottky diode" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,181, issued on Sept. 1, was assigned to The 13th Research Institute of China Electronics Technology Group Corp. (Shijiazhuang, China). "Met... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Electrostatic discharge circuitry for a high-voltage semiconductor device" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,182, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Electrostatic discharge circuitry f... Read More

US Patent Issued to Renesas Electronics on Sept. 1 for "Method of manufacturing semiconductor device" (Japanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,183, issued on Sept. 1, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by T... Read More

US Patent Issued to Infineon Technologies on Sept. 1 for "Semiconductor device including protruding region" (German Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,184, issued on Sept. 1, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device including protruding region" w... Read More

US Patent Issued to STMICROELECTRONICS on Sept. 1 for "HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method" (Italian Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,185, issued on Sept. 1, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "HEMT transistor of the normally off type includ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Controlled doping in a gate dielectric layer" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,186, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Controlled doping in a gate dielect... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Integrated circuit with pattern overlay for assisting overlay signal and accuracy" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,187, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit with pattern ove... Read More

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US Patent Issued to DIODES on Sept. 1 for "Semiconductor rectifier" (Taiwanese, British, Chinese, American Inventors)

US Patent Issued to International Business Machines on Sept. 1 for "Trench capacitor in backside diffusion break" (New York Inventors)

US Patent Issued to SAMSUNG ELECTRONICS, Pusan National University Industry-University Cooperation on Sept. 1 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to The 13th Research Institute of China Electronics Technology Group on Sept. 1 for "Method for preparing Schottky diode and Schottky diode" (Chinese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Electrostatic discharge circuitry for a high-voltage semiconductor device" (Taiwanese Inventors)

US Patent Issued to Renesas Electronics on Sept. 1 for "Method of manufacturing semiconductor device" (Japanese Inventors)

US Patent Issued to Infineon Technologies on Sept. 1 for "Semiconductor device including protruding region" (German Inventors)

US Patent Issued to STMICROELECTRONICS on Sept. 1 for "HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method" (Italian Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Controlled doping in a gate dielectric layer" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Integrated circuit with pattern overlay for assisting overlay signal and accuracy" (Taiwanese Inventors)